Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
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DOI: 10.1063/5.0007173
Abstract: NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt,… read more here.
Keywords: relaxation; relaxation nonvolatile; resistance; nonvolatile features ... See more keywords