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Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111025
Abstract: Abstract In order to reduce bombardment or chemical etching damage of Ge pMOSFET treated by F-based plasma, an additional O2 or/and N2 plasma treatment was applied on the high-k gate dielectric in this work. The…
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Keywords:
based double;
double plasma;
reliability characteristics;
plasma treatment ... See more keywords
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Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111034
Abstract: Abstract Germanium (Ge) is a promising channel material to replace silicon (Si) for the sub-10 nm CMOS technology node. However, the realization of Ge-based MOSFET may be limited by its poor reliability characteristics. In addition, radiation…
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Keywords:
radiation effects;
radiation;
effects reliability;
radiation exposure ... See more keywords
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Published in 2017 at "Vacuum"
DOI: 10.1016/j.vacuum.2016.10.004
Abstract: Abstract Electrical and reliability characteristics of Ge pMOSFETs with H 2 , NH 3 and NH 3 +H 2 plasma treatments were studied in this work. The GeO x interfacial layer (IL) formation and HfON…
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Keywords:
electrical reliability;
reliability characteristics;
plasma treatment;
plasma treatments ... See more keywords
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Published in 2023 at "Molecules"
DOI: 10.3390/molecules28031134
Abstract: In this study, the reliability characteristics of metal-insulator-semiconductor (MIS) capacitor structures with low-dielectric-constant (low-k) materials have been investigated in terms of metal gate area and geometry and thickness of dielectric film effects. Two low-k materials,…
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Keywords:
low dielectric;
characteristics metal;
insulator semiconductor;
metal insulator ... See more keywords