Reliability Issues of Amorphous Oxide Semiconductor Based Thin Film Transistors
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DOI: 10.1039/d4tc01392a
Abstract: Amorphous oxide semiconductors (AOS) are non-crystalline compounds composed of metal elements and oxygen elements, possessing distinctive electrical properties. even in their amorphous state, these materials exhibit favourable carrier transport paths... read more here.
Keywords: issues amorphous; based thin; amorphous oxide; reliability issues ... See more keywords
Resolving the Reliability Issues of Open Blocks for 3-D NAND Flash: Observations and Strategies
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2022.3197487
Abstract: While the block size of 3-D NAND flash memory increases with the density and capacity, the raw bit-error rates (RBER) of open blocks could be significantly increased. This article conducts a systematic study over reliability… read more here.
Keywords: block; nand flash; reliability; open blocks ... See more keywords