Reliability of scalable MoS 2 FETs with 2 nm crystalline CaF 2 insulators
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DOI: 10.1088/2053-1583/ab28f2
Abstract: Two-dimensional (2D) semiconductors are currently considered a very promising alternative to Si for channel applications in next-generation field-effect transistors of sub-5 nm designs. However, their huge potential cannot be fully exploited owing to a lack… read more here.
Keywords: performance reliability; mos fets; reliability scalable; caf2 ... See more keywords