Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C
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DOI: 10.1016/j.microrel.2020.113694
Abstract: Abstract The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at high temperature (from 900 °C to… read more here.
Keywords: temperature; high temperature; stable reliable; contact ... See more keywords