Toward reliable RRAM performance: macro- and micro-analysis of operation processes
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DOI: 10.1007/s10825-017-1105-5
Abstract: Resistive random access memory (RRAM) technology promises superior performance and scalability while employing well-developed fabrication processes. Conductance in insulating oxides employed in RRAM devices can be strongly affected by atomic-level changes that makes cell switching… read more here.
Keywords: reliable rram; rram performance; toward reliable; operation ... See more keywords