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Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac3dc0
Abstract: In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (R on) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our…
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Keywords:
relief layer;
resistance degradation;
degradation;
step graded ... See more keywords