Removing overhang and increasing atom re-deposition of sputtering to enable gap-filling scalability
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DOI: 10.1016/j.surfcoat.2018.08.080
Abstract: Abstract Semiconductor manufacturing has reached sub-10-nm technology nodes, and nanoscale gap filling has become an emergency critical requirement for memory with high density and low power consumption. However, it is limited by the non-conformal deposition… read more here.
Keywords: gap; conventional sputtering; overhang increasing; removing overhang ... See more keywords