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Published in 2023 at "Crystals"
DOI: 10.3390/cryst13060886
Abstract: Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001)…
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Keywords:
vertical rectifiers;
nio ga2o3;
reproducible nio;
ga2o3 vertical ... See more keywords