Studying ReRAM devices at Low Earth Orbits using the LabOSat platform
Sign Up to like & getrecommendations! Published in 2019 at "Radiation Physics and Chemistry"
DOI: 10.1016/j.radphyschem.2018.07.005
Abstract: Abstract LabOSat (acronym for “Laboratory On a Satellite”) is a type of electronic platform designed to perform experiments in harsh, remote environments. Up to now, LabOSat platforms have been used mainly for characterizing and validating… read more here.
Keywords: low earth; labosat platform; earth orbits; reram devices ... See more keywords
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108113
Abstract: Abstract In this work, we have studied the set and the reset transitions in hafnium oxide-based metal–insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged… read more here.
Keywords: capacitor; reram devices; discharge; reset transitions ... See more keywords
Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5024504
Abstract: Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content… read more here.
Keywords: reram devices; thin films; conductive filaments; transport ... See more keywords
Interface modification of HfO2-based ReRAM via low temperature anneal
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab362a
Abstract: Resistive Random Access Memory (ReRAM) is a novel form of non-volatile memory with a variety of applications ranging from neuromorphic circuits used for artificial intelligence applications, to a potential replacement for flash memory. Each application… read more here.
Keywords: hfo2 based; reram devices; based reram; temperature ... See more keywords
Intrinsically Secure Non-Volatile Memory Using ReRAM Devices
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3209148
Abstract: The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing… read more here.
Keywords: reram devices; intrinsically secure; volatile memory; non volatile ... See more keywords
A Compact Memristor Model for Neuromorphic ReRAM Devices in Flux-Charge Space
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2021.3093470
Abstract: In this paper, we present a compact memristor model for bipolar neuromorphic ReRAM devices. The proposed model focuses on the high level description of the device, and it reproduces some of the most important characteristics… read more here.
Keywords: memristor model; reram devices; neuromorphic reram; model ... See more keywords
Vulnerabilities and Reliability of ReRAM Based PUFs and Memory Logic
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Reliability"
DOI: 10.1109/tr.2019.2910793
Abstract: Resistive Random-Access Memory (ReRAM) devices have caught significant research attention as scalable nonvolatile memory technology for high-density data storage in 3-D crossbar architectures. ReRAM devices can switch with low programming voltages ( read more here.
Keywords: vulnerabilities reliability; memory; reram based; reram devices ... See more keywords