Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer
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DOI: 10.7567/1882-0786/ab22df
Abstract: The advantages of using an Al x Ga1-x N carrier reservoir layer (CRL) instead of the traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were investigated. The results indicate that the internal quantum… read more here.
Keywords: carrier reservoir; reservoir layer; ga1 carrier; efficiency ... See more keywords