RESET current optimization for phase change memory based on the sub-threshold slope
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.03.003
Abstract: Abstract The RESET current (Irst) is a key parameter to characterize power consumption and reliability of phase change memory (PCM) device. And the Optimization of Irst is a classic issue in the investigation of PCM… read more here.
Keywords: optimization; reset current; change memory; phase change ... See more keywords
Scalable CGeSbTe-based phase change memory devices employing U-shaped cells
Sign Up to like & getrecommendations! Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.04.048
Abstract: Abstract Phase change memory (PCM) that is operated on resistance changes caused by joule heating has been suggested as the next-generation memory for scaling since its programming current scales linearly. We propose a U-shaped cell… read more here.
Keywords: reset current; phase change; shaped cell; change memory ... See more keywords