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Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2833149
Abstract: Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that…
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Keywords:
reset;
ta2o5 rram;
reset phenomenon;
based defect ... See more keywords