Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108113
Abstract: Abstract In this work, we have studied the set and the reset transitions in hafnium oxide-based metal–insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged… read more here.
Keywords: capacitor; reram devices; discharge; reset transitions ... See more keywords