A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study
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DOI: 10.1109/led.2016.2631619
Abstract: A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of… read more here.
Keywords: mosfet; tcad simulation; resilience charge; device ... See more keywords