Hydrogen etch resistance of aluminium oxide passivated graphitic layers
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DOI: 10.1088/1361-6463/ac2200
Abstract: Graphene inherently possesses defect sites and grain boundaries that are vulnerable to chemical etching by hydrogen radicals. In this study, an etch-mitigation method is presented to selectively passivate these sites using atomic layer deposition (ALD)… read more here.
Keywords: resistance aluminium; etch resistance; aluminium oxide; physics ... See more keywords