Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
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DOI: 10.1063/5.0026147
Abstract: Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In… read more here.
Keywords: metal layers; resistance; current pulses; resistance changes ... See more keywords