Resistance to state transitions in responsiveness is differentially modulated by different volatile anaesthetics in male mice.
Sign Up to like & getrecommendations! Published in 2020 at "British journal of anaesthesia"
DOI: 10.1016/j.bja.2020.05.031
Abstract: BACKGROUND Recent studies point to a fundamental distinction between population-based and individual-based anaesthetic pharmacology. At the population level, anaesthetic potency is defined as the relationship between drug concentration and the likelihood of response to a… read more here.
Keywords: state; differentially modulated; resistance state; pharmacology ... See more keywords
Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.106347
Abstract: Abstract We report on the bipolar resistive switching behavior of a SiO2/Si multilayer (ML) structure measured without current compliance for non-volatile memory applications. The SiO2/Si ML structure was thermally annealed to induce the formation of… read more here.
Keywords: conduction; resistance state; sio2 multilayer; resistive switching ... See more keywords
Programming optimization for alleviating relaxation effect in RRAM high-resistance state
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0259294
Abstract: Resistive random access memory (RRAM) is considered a highly promising alternative for brain-inspired computing and next-generation memory technologies. However, the conductance states relaxation effect substantially narrows the operational window, thereby exacerbating the occurrence of data… read more here.
Keywords: high resistance; effect; resistance state; relaxation ... See more keywords
Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2666147
Abstract: Two different displacement damage experiments were performed on CBRAM cells. In one experiment, conductive bridging random access memory (CBRAM) cells were exposed to 14 MeV neutrons to a total fluence of $3.19 \times 10^{13}$ n/cm2.… read more here.
Keywords: cbram cells; resistance state; displacement damage; resistance ... See more keywords
Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling
Sign Up to like & getrecommendations! Published in 2024 at "Science Advances"
DOI: 10.1126/sciadv.adl4633
Abstract: Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric… read more here.
Keywords: field; resistance; magnetic tunnel; field control ... See more keywords