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Published in 2017 at "Journal of colloid and interface science"
DOI: 10.1016/j.jcis.2017.01.095
Abstract: In this work, resistance switching behaviours in solution processed chromium (Cr)-doped strontium titanate (SrTiO3) films have been investigated. Undoped SrTiO3 film shows I-V characteristics of typical nonlinear resistor and no resistance hysteresis loops are observed.…
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Keywords:
solution processed;
resistance;
doped strontium;
processed chromium ... See more keywords
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Published in 2018 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2017.12.081
Abstract: Abstract Multilevel resistance switching (RS) effect has attracted more and more attention due to its promising potential for the increase of storage density in memory devices. In this work, the transport properties are investigated in…
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Keywords:
effect;
switching effect;
resistance;
multilevel resistance ... See more keywords
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Published in 2017 at "Materials Letters"
DOI: 10.1016/j.matlet.2017.03.014
Abstract: Abstract High-quality (0 1 0) VO2 thin films were epitaxially grown on functional ferroelectric (1 1 1)-oriented Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-0.3PT) substrates by reactive magnetron sputtering. The VO2/PMN-0.3PT heterostructures demonstrated metal–insulator transition (MIT) hysteresis with a resistance change of the order…
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Keywords:
non volatile;
transition;
mg1 3nb2;
3nb2 7ti0 ... See more keywords
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Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106718
Abstract: Abstract In this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage…
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Keywords:
switching behaviour;
resistance switching;
zno;
annealing temperature ... See more keywords
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Published in 2022 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.2c02264
Abstract: Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-Ag2S films…
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Keywords:
full inorganic;
flexible memristor;
resistance switching;
memristor ... See more keywords
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Published in 2022 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.2c11183
Abstract: Flexible memristor-based neural network hardware is capable of implementing parallel computation within the memory units, thus holding great promise for fast and energy-efficient neuromorphic computing in flexible electronics. However, the current flexible memristor (FM) is…
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Keywords:
resistance switching;
energy efficient;
interface;
memristor ... See more keywords
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Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4994312
Abstract: With the rapid development of new device miniaturization technology, there is invigorated interest in magnetic nanostructures for potential application in novel multifunctional devices. In continuation to our search for a suitable magnetic material having Curie…
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Keywords:
thin films;
domain structure;
switching characteristics;
resistance switching ... See more keywords
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Published in 2020 at "Journal of Materials Research"
DOI: 10.1557/jmr.2020.315
Abstract:
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Keywords:
continuous thick;
behaviors continuous;
hbn films;
thick hbn ... See more keywords
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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13111917
Abstract: The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e−) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy. The…
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Keywords:
c12a7;
switching polycrystalline;
resistance;
resistance switching ... See more keywords