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Published in 2020 at "Materials"
DOI: 10.3390/ma13122857
Abstract: Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became…
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Keywords:
heterojunction tandem;
low resistance;
tio2 heterojunction;
resistance tio2 ... See more keywords