Demonstration of Multi-State Memory Device Combining Resistive and Magnetic Switching Behaviors
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DOI: 10.1109/led.2018.2821662
Abstract: Resistively enhanced magnetic tunnel junction (Re-MTJ) nonvolatile memory devices with a heterogeneous structure of an MTJ surrounded by resistive filaments were investigated for the first time for multi-level cell memory applications. By independent control of… read more here.
Keywords: magnetic switching; multi state; resistive magnetic; memory ... See more keywords