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Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.11.026
Abstract: Abstract Saving energy and reducing operation parameter fluctuations remain crucial for enabling resistive random access memory (RRAM) to emerge as a universal memory. In this work, we report a resistive memory device based on an…
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Keywords:
resistive memory;
surface;
amorphous mgo;
mgo film ... See more keywords
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Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2019.02.216
Abstract: Abstract Uniformity of memory switching parameters is a critical issue in the application of resistance random access memory (RRAM). Herein, we report a resistive memory device based on a NiO layer pre-treated with an ionic…
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Keywords:
pre;
pre treatment;
memory;
ionic liquid ... See more keywords
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Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.159805
Abstract: Abstract Se36 Sb31Cu33 non - ordered material was synthesized by the melt-quenching procedure. Thin films of various thicknesses (125–520 nm) were obtained by thermal evaporation procedure. The DC conductivity and switching phenomenon were examined in the…
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Keywords:
electrical conductivity;
conductivity resistive;
se36 sb31cu33;
conductivity ... See more keywords
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Published in 2020 at "Tetrahedron"
DOI: 10.1016/j.tet.2020.131471
Abstract: Abstract Three π-conjugated small molecules DPBT, DEPBT and DEPBPy, based on bithiazole or bipyridine were designed and synthesized. In DEPBT and DEPBPy, the central core and terminal phenyl groups are connected by C C double…
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Keywords:
structures optoelectronic;
depbt depbpy;
optoelectronic properties;
resistive memory ... See more keywords
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Published in 2017 at "Nature materials"
DOI: 10.1038/nmat5059
Abstract: This corrects the article DOI: 10.1038/nmat5009.
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Keywords:
using solution;
resistive memory;
corrigendum robust;
robust resistive ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-14498-3
Abstract: The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that…
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Keywords:
memory;
thermometry;
resolved thermometry;
resistive memory ... See more keywords
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Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr04407d
Abstract: Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it…
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Keywords:
switching behaviour;
reversible resistive;
resistive switching;
resistive memory ... See more keywords
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Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/c9tc07001j
Abstract: Resistive random access memories (RRAMs) with minimal power dissipation, high speed, and matrix-vector multiplication capability are potentially ideal for data-centric applications such as neuromorphic computing. However, RRAMs still suffer from instability caused by uncontrolled filament…
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Keywords:
resistive memory;
oxide resistive;
metal oxide;
memory deterministic ... See more keywords
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Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc00291g
Abstract: As one of the candidates for the next generation of data storage techniques, organic multilevel resistive memory has attracted more and more attention. Even though many types of materials have been fabricated into memory devices…
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Keywords:
memory behaviors;
resistive memory;
conjugated zwitterion;
memory devices ... See more keywords
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Published in 2018 at "Physical review applied"
DOI: 10.1103/physrevapplied.9.044041
Abstract: Jason D. Hoffman, Stephen M. Wu, Brian J. Kirby, and Anand Bhattacharya Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA NIST Center for Neutron…
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Keywords:
antiferromagnetic resistive;
memory oxide;
resistive memory;
tunable noncollinear ... See more keywords
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Published in 2019 at "IEEE Transactions on Communications"
DOI: 10.1109/tcomm.2019.2897762
Abstract: Resistive memory is a promising technology for achieving unprecedented storage densities and new in-memory computing features. However, to fulfill their promise, resistive memories require array architectures suffering from a severe interference effect called “sneak paths.”…
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Keywords:
sneak path;
memory;
interference;
resistive memory ... See more keywords