Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
Sign Up to like & getrecommendations! Published in 2017 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201700384
Abstract: In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as… read more here.
Keywords: resistive random; resistive switching; random access; filamentary distributed ... See more keywords
Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000066
Abstract: In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and… read more here.
Keywords: fin like; structure; resistive random; ltps transistor ... See more keywords
In Memory Energy Application for Resistive Random Access Memory
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100297
Abstract: This work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as… read more here.
Keywords: energy; access memory; random access; memory ... See more keywords
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electroceramics"
DOI: 10.1007/s10832-017-0095-9
Abstract: Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This… read more here.
Keywords: resistive random; bottom fabrication; memory; device ... See more keywords
Effects of moisture and electrode material on AlN-based resistive random access memory
Sign Up to like & getrecommendations! Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.05.157
Abstract: Abstract Resistive random access memory (RRAM) has been developed as a next-generation nonvolatile memory because of its fast operation speed, low power consumption, high density, and simple structure. Non-oxide materials such as AlN-based RRAM also… read more here.
Keywords: access memory; random access; aln based; memory ... See more keywords
Resistive random access memory based on gallium oxide thin films for self-powered pressure sensor systems
Sign Up to like & getrecommendations! Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2020.05.191
Abstract: Abstract The resistive switching (RS) behavior of a gallium oxide (Ga2O3) thin film for use in resistive random access memory (RRAM) was investigated. Ta/Ga2O3/Pt memory devices exhibited favorable RS behavior, such as a small distribution… read more here.
Keywords: resistive random; random access; access memory; gallium oxide ... See more keywords
Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.06.178
Abstract: Abstract Bilayer of NiO x /TiO 2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS)… read more here.
Keywords: resistive random; resistive switching; random access; enhanced resistive ... See more keywords
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.6b12771
Abstract: Resistive random access memories (RRAM) require high density, low power consumption and high reliability. Systematic statistic electrical, material and theoretical studies were demonstrated in this work to point out and clarify a key impact of… read more here.
Keywords: resistive random; key impact; carbon; random access ... See more keywords
Remote control of resistive switching in TiO2 based resistive random access memory device
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-17607-4
Abstract: We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state,… read more here.
Keywords: resistive random; switching tio2; control; based resistive ... See more keywords
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr00934h
Abstract: Resistive random access memory (RRAM) based reconfigurable logic provides a temporal programmable dimension to realize Boolean logic functions and is regarded as a promising route to build non-von Neumann computing architecture. In this work, a… read more here.
Keywords: resistive random; array; random access; access memory ... See more keywords
Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
Sign Up to like & getrecommendations! Published in 2018 at "RSC Advances"
DOI: 10.1039/c8ra03181a
Abstract: We discuss the fabrication procedure and device characteristics of ITO/Zn2TiO4/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics… read more here.
Keywords: resistive random; random access; zn2tio4 resistive; access memory ... See more keywords