Articles with "resistive switching" as a keyword



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Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

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Published in 2017 at "Advanced Functional Materials"

DOI: 10.1002/adfm.201700384

Abstract: In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as… read more here.

Keywords: resistive random; resistive switching; random access; filamentary distributed ... See more keywords
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Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202002110

Abstract: 3D organic–inorganic and all‐inorganic lead halide perovskites have been intensively pursued for resistive switching memories in recent years. Unfortunately, instability and lead toxicity are two foremost challenges for their large‐scale commercial applications. Dimensional reduction and… read more here.

Keywords: low dimensional; inorganic lead; resistive switching; dimensional lead ... See more keywords
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Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202002638

Abstract: Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric… read more here.

Keywords: blocking conducting; capping layers; hzo; grain boundaries ... See more keywords
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Enhancing Resistive Switching Performance and Ambient Stability of Hybrid Perovskite Single Crystals via Embedding Colloidal Quantum Dots

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202002948

Abstract: Hybrid organic‐inorganic halide perovskites are actively pursued for optoelectronic technologies, but the poor stability is the Achilles’ heel of these materials that hinders their applications. Very recently, it has been shown that lead sulfide (PbS)… read more here.

Keywords: perovskite single; single crystals; resistive switching; quantum dots ... See more keywords
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Room‐Temperature‐Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

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Published in 2023 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202213064

Abstract: Reversible metal‐filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware‐implementation. However, uncontrollable filament‐formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with… read more here.

Keywords: resistive switching; switching memory; tissue classification;
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Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

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Published in 2023 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202300428

Abstract: The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a… read more here.

Keywords: boron nitride; nitride threshold; microscopy; resistive switching ... See more keywords
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Design of Materials Configuration for Optimizing Redox-based Resistive Switching Memories.

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Published in 2021 at "Advanced materials"

DOI: 10.1002/adma.202105022

Abstract: Redox-based resistive random access memories (ReRAM) are based on electrochemical redox processes at the electrode/electrolyte interfaces. The selection of materials and materials combinations strongly influence the related nanoscale interfacial processes, thus playing a crucial role… read more here.

Keywords: materials configuration; redox based; based resistive; resistive switching ... See more keywords
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Interface‐Modulated Resistive Switching in Mo‐Irradiated ReS2 for Neuromorphic Computing

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Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202202722

Abstract: Coupling charge impurity scattering effects and charge‐carrier modulation by doping can offer intriguing opportunities for atomic‐level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here… read more here.

Keywords: interface modulated; resistive switching; modulated resistive; switching irradiated ... See more keywords
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Resistive Switching Crossbar Arrays Based on Layered Materials

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Published in 2022 at "Advanced Materials"

DOI: 10.1002/adma.202205402

Abstract: Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of… read more here.

Keywords: materials resistive; crossbar arrays; layered materials; resistive switching ... See more keywords
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Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films

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Published in 2021 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202100915

Abstract: Resistive switching mechanisms underlying memristive devices are widely investigated, and the importance as well as influence of ambient conditions on the electrical performances of memristive cells are already recognized. However, detailed understanding of the ambient… read more here.

Keywords: moisture; thin films; zno thin; resistive switching ... See more keywords
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Investigation of the Impact of High Temperatures on the Switching Kinetics of Redox‐Based Resistive Switching Cells using a High‐Speed Nanoheater

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Published in 2017 at "Advanced electronic materials"

DOI: 10.1002/aelm.201700294

Abstract: Ionic transport greatly influences the switching kinetics of filamentary resistive switching memories and depends strongly on temperature and electric fields. To separate the impact of both parameters on the switching kinetics and to further deepen… read more here.

Keywords: high temperatures; switching kinetics; impact high; investigation impact ... See more keywords