Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
Sign Up to like & getrecommendations! Published in 2017 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201700384
Abstract: In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as… read more here.
Keywords: resistive random; resistive switching; random access; filamentary distributed ... See more keywords
Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202002110
Abstract: 3D organic–inorganic and all‐inorganic lead halide perovskites have been intensively pursued for resistive switching memories in recent years. Unfortunately, instability and lead toxicity are two foremost challenges for their large‐scale commercial applications. Dimensional reduction and… read more here.
Keywords: low dimensional; inorganic lead; resistive switching; dimensional lead ... See more keywords
Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202002638
Abstract: Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallites coexist with grain boundaries between o-HZO and a residual paraelectric… read more here.
Keywords: blocking conducting; capping layers; hzo; grain boundaries ... See more keywords
Enhancing Resistive Switching Performance and Ambient Stability of Hybrid Perovskite Single Crystals via Embedding Colloidal Quantum Dots
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202002948
Abstract: Hybrid organic‐inorganic halide perovskites are actively pursued for optoelectronic technologies, but the poor stability is the Achilles’ heel of these materials that hinders their applications. Very recently, it has been shown that lead sulfide (PbS)… read more here.
Keywords: perovskite single; single crystals; resistive switching; quantum dots ... See more keywords
Room‐Temperature‐Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202213064
Abstract: Reversible metal‐filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware‐implementation. However, uncontrollable filament‐formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with… read more here.
Keywords: resistive switching; switching memory; tissue classification;
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202300428
Abstract: The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a… read more here.
Keywords: boron nitride; nitride threshold; microscopy; resistive switching ... See more keywords
Unveiling the Resistive Switching Mechanism and Low Current Dynamics of Ru‐based Hybrid Synaptic Memristors
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202416309
Abstract: Mobile Ru ions in oxide media have been reported as a novel species that offer extremely low switching currents for memristors. However, their bi‐stable resistive‐switching (RS) and low‐switching currents dynamics have not been quantitatively unveiled.… read more here.
Keywords: switching currents; mechanism low; mechanism; based hybrid ... See more keywords
Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202418980
Abstract: Low‐current multilevel programmability with inherent non‐volatility and high stability of resistance states is required for both multi‐bit memory storage and deep learning accelerators but is difficult to achieve. Here, in a resistive switching system, this… read more here.
Keywords: resistive switching; non volatile; fast non; ultra fast ... See more keywords
Design of Materials Configuration for Optimizing Redox-based Resistive Switching Memories.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202105022
Abstract: Redox-based resistive random access memories (ReRAM) are based on electrochemical redox processes at the electrode/electrolyte interfaces. The selection of materials and materials combinations strongly influence the related nanoscale interfacial processes, thus playing a crucial role… read more here.
Keywords: materials configuration; redox based; based resistive; resistive switching ... See more keywords
Interface‐Modulated Resistive Switching in Mo‐Irradiated ReS2 for Neuromorphic Computing
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202202722
Abstract: Coupling charge impurity scattering effects and charge‐carrier modulation by doping can offer intriguing opportunities for atomic‐level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here… read more here.
Keywords: interface modulated; resistive switching; modulated resistive; switching irradiated ... See more keywords
Resistive Switching Crossbar Arrays Based on Layered Materials
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202205402
Abstract: Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of… read more here.
Keywords: materials resistive; crossbar arrays; layered materials; resistive switching ... See more keywords