Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K
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DOI: 10.1109/led.2017.2647831
Abstract: A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I–V characteristics of epitaxially relaxed… read more here.
Keywords: response acetone; response; ingan gan; acetone sensing ... See more keywords