Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies
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DOI: 10.1016/j.mssp.2020.105491
Abstract: Abstract The aspects of Si+ implantation for low resistivity ohmic contact formation to gallium nitride (GaN) with moderate annealing temperatures for dopant activation were studied: encapsulation layer and temperature for activation annealing, and implantation fluence.… read more here.
Keywords: ohmic contact; formation; retarding layer; activation ... See more keywords