Separation of Lateral Migration Components by Hole During the Short-Term Retention Operation in 3-D NAND Flash Memories
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DOI: 10.1109/ted.2020.2989734
Abstract: In this brief, we modeled the charge loss in the program verify level 1 (PV1) during the short-term retention operation. As a result, we confirmed that the charge loss in the lateral direction [lateral migration… read more here.
Keywords: short term; retention operation; lateral migration; term retention ... See more keywords