Process Corners Analysis of Data Retention Voltage (DRV) for 6T, 8T, and 10T SRAM Cells at 45 nm
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DOI: 10.1080/03772063.2017.1393351
Abstract: ABSTRACT The quest for low power increases with the advancement in technology as a result of continuous device scaling. Static random access memory (SRAM) represents the technology workhorse due to its compatibility with the logic.… read more here.
Keywords: analysis; sram; process; retention voltage ... See more keywords