Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors
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DOI: 10.1063/1.4997172
Abstract: Longwave infrared detectors using p-type absorbers composed of InAs-rich type-II superlattices (T2SLs) nearly always suffer from high surface currents due to carrier inversion on the etched sidewalls. Here, we demonstrate reticulated shallow etch mesa isolation… read more here.
Keywords: surface; shallow etch; etch; reticulated shallow ... See more keywords