Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment
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DOI: 10.1039/d0ce01489c
Abstract: A novel microwave plasma etching technique was used to reveal various types of dislocation on the C-face of 4H-SiC. Etch pits formed on the C-face of 4H-SiC by H2–O2 plasma etching were observed using a… read more here.
Keywords: microwave plasma; plasma etching; face; face sic ... See more keywords