A Comparative Study of Freewheeling Methods for eGaN HEMTs in a Phase-Leg Configuration
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2020.3014964
Abstract: Enhancement gallium nitride high-electron-mobility transistors (eGaN HEMTs) have been developed with lower conduction losses and higher switching speed compared with MOSFETs. Self-commutated reverse conduction (SCRC) mechanism determines no reverse recovery phenomenon but a larger reverse… read more here.
Keywords: egan hemts; conduction; phase leg; reverse conduction ... See more keywords
Modeling Schottky Diode Rectifiers Considering the Reverse Conduction for RF Wireless Power Transfer
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2021.3102576
Abstract: The aim of this work is to model Schottky diodes series rectifier for application in Radio Frequency Energy Harvesting (RFEH). A time-domain approach is proposed, including the reverse conduction of the diodes, which can significantly… read more here.
Keywords: modeling schottky; schottky diode; power; reverse conduction ... See more keywords
Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3579457
Abstract: The GaN-based high-electron mobility transistors (HEMTs) can operate efficiently in reverse conduction mode without requiring an intrinsic antiparallel diode, reducing power losses and enabling higher switching frequencies. This study investigates degradation mechanisms in Schottky p-GaN… read more here.
Keywords: reverse conduction; tex math; inline formula;
Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2023.3331891
Abstract: In bridgeless power factor correction converters and inverters, GaN high-electron-mobility transistors (HEMTs) operate in both forward and reverse conduction modes, which may feature different dynamic on-resistance (RON) behaviors. Despite the extensive study of dynamic RON… read more here.
Keywords: reverse conduction; sub; italic italic; sub sub ... See more keywords