Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
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DOI: 10.1007/s11664-019-07098-6
Abstract: Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated, including low reverse leakage… read more here.
Keywords: leakage; regrowth; gan diodes; low reverse ... See more keywords
Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc05652a
Abstract: Reduction of the reverse leakage current is critical to AlGaN/GaN heterostructures in high power and high frequency applications. Taking AlGaN/GaN Schottky barrier diodes (SBDs) as an example, we demonstrate both theoretically and experimentally that low-fluence… read more here.
Keywords: algan gan; dls; gan heterostructures; reverse leakage ... See more keywords
Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy
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DOI: 10.1063/5.0012794
Abstract: We utilized ultra-high sensitive emission microscopy to investigate the origin of reverse leakage current of edge-defined film-fed grown (001) β-Ga2O3 Schottky barrier diodes. In the emission patterns, we observed a partially appearing void, having a… read more here.
Keywords: schottky barrier; microscopy; reverse leakage; leakage current ... See more keywords
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0044130
Abstract: In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga2O3 periodic fin widths of 1.5/3/5 μm are demonstrated with the incorporation of p-type NiOx. The β-Ga2O3 HJBS diode achieves a… read more here.
Keywords: ga2o3; reverse leakage; leakage current; ga2o3 hetero ... See more keywords