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   Articles with "reverse recovery" as a keyword



Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER)

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recommendations! Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.06.020

Abstract: Abstract In this work, the dependence of the AlGaN/GaN L-FERs’ reverse recovery characteristics on the device geometry (MOS-controlled channel length) is investigated by TCAD Sentaurus. It is found that the reverse recovery time and reverse… read more here.

Keywords: reverse recovery; mos controlled; algan gan; controlled channel ... See more keywords

A heterojunction-based SiC power double trench MOSFET with improved switching performance and reverse recovery

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recommendations! Published in 2020 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2020.106466

Abstract: Abstract In this paper, a heterojunction-based SiC double trench MOSFET (HJ-DTMOS) is proposed to improve its switching performance and the reverse recovery characteristic. In the HJ-DTMOS, a n+p− polysilicon junction is introduced in both the… read more here.

Keywords: trench; based sic; heterojunction based; reverse recovery ... See more keywords

A modified finite difference model to the reverse recovery of silicon PIN diodes

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recommendations! Published in 2020 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2020.107839

Abstract: Abstract In this paper, Silvaco Atlas TCAD device-circuit mixed simulation and MATLAB programming are used to compute the reverse recovery processes of silicon PIN diodes. The latter is based on solving the ambipolar diffusion equation… read more here.

Keywords: silicon pin; reverse recovery; simulation; pin diodes ... See more keywords
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Integrated 100 V bootstrap diode with enhanced reverse recovery characteristics for eGaN‐field effect transistor gate drivers

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recommendations! Published in 2020 at "Electronics Letters"

DOI: 10.1049/el.2019.3638

Abstract: An integrated 100 V bootstrap diode (DBST) with anode engineering based on the double epitaxial process for enhancement mode gallium nitride (eGaN) transistor gate drivers is first proposed in this Letter. On the anode side,… read more here.

Keywords: recovery; bootstrap diode; reverse recovery; 100 bootstrap ... See more keywords

Enhanced reverse recovery characteristics of 1.2 kV SiC MOSFETs with integrated low schottky-barrier Poly-Si/SiC JBS and deep p+ guard regions

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recommendations! Published in 2025 at "Physica Scripta"

DOI: 10.1088/1402-4896/adf6f1

Abstract: We propose 1.2 kV Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a monolithically integrated low Schottky-barrier poly-Si/SiC junction-barrier Schottky (JBS) diode and deep p+ guard regions. The n-type poly-Si anode (work function ≈4.03 eV)… read more here.

Keywords: jbs; reverse recovery; schottky barrier; deep guard ... See more keywords

Accurate Modeling of Transformer-Based Voltage-Multiplier Considering Reverse Recovery Process of the Leakage Inductance in Step-up Converter

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recommendations! Published in 2024 at "IEEE Transactions on Circuits and Systems I: Regular Papers"

DOI: 10.1109/tcsi.2024.3413583

Abstract: The advent of third-generation semiconductors brings the switching frequency into a much higher level, which enables high-frequency transformer with a smaller footprint in power electronics. Due to its inherent ability of voltage amplification, the transformer-based… read more here.

Keywords: based voltage; reverse recovery; transformer based; voltage ... See more keywords

Reverse recovery characteristics of high power thyristors in HVDC converter valve

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recommendations! Published in 2017 at "IEEE Transactions on Dielectrics and Electrical Insulation"

DOI: 10.1109/tdei.2017.006258

Abstract: The reverse recovery characteristics of high power thyristor are important device physical properties influencing the reliable operation of HVDC thyristor valve. In this paper, the reverse recovery characteristics of high power thyristor are investigated from… read more here.

Keywords: recovery; thyristor; high power; reverse recovery ... See more keywords

A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode

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recommendations! Published in 2019 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2019.2936584

Abstract: A superjunction MOSFET with an integrated tunneling diode is proposed and investigated by simulations in this article. The tunneling diode comprised the N+ region and the P+ region on the surface of the P-base region… read more here.

Keywords: recovery charge; tunneling diode; reverse recovery; region ... See more keywords

A Phase Error Reverse Recovery Method for Bistatic Forward-Looking SAR Based on Ground Combined Beam Coordinate

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recommendations! Published in 2025 at "IEEE Transactions on Geoscience and Remote Sensing"

DOI: 10.1109/tgrs.2025.3637863

Abstract: In recent years, the ground Cartesian back-projection (GCBP) algorithm has demonstrated significant advantages for bistatic forward-looking synthetic aperture radar (BFSAR) imaging with arbitrary geometries and complex configurations, primarily due to its interpolation-free operation. However, airborne… read more here.

Keywords: forward looking; method; phase error; reverse recovery ... See more keywords

A Voltage Model of p-i-n Diodes at Reverse Recovery Under Short-Time Freewheeling

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recommendations! Published in 2017 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2016.2535664

Abstract: Fast switching and large capacity in modern power converters generate large-voltage peak during the diode's reverse-recovery process. Being different from the steady-state reverse recovery, short-time freewheeling of diodes at higher speed switching may generate higher… read more here.

Keywords: model; short time; reverse recovery; time freewheeling ... See more keywords

Diode Reverse Recovery Process and Reduction of a Half-Wave Series Cockcroft–Walton Voltage Multiplier for High-Frequency High-Voltage Generator Applications

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recommendations! Published in 2019 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2018.2834406

Abstract: This paper investigates the diode reverse recovery process and reduction of a half-wave (HW) series Cockcroft–Walton (CW) voltage multiplier based on the steady-state analysis for high-frequency high-voltage (HV) generator applications. The diode reverse recovery process… read more here.

Keywords: voltage; frequency; voltage multiplier; diode reverse ... See more keywords