Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER)
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.020
Abstract: Abstract In this work, the dependence of the AlGaN/GaN L-FERs’ reverse recovery characteristics on the device geometry (MOS-controlled channel length) is investigated by TCAD Sentaurus. It is found that the reverse recovery time and reverse… read more here.
Keywords: reverse recovery; mos controlled; algan gan; controlled channel ... See more keywords
A heterojunction-based SiC power double trench MOSFET with improved switching performance and reverse recovery
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106466
Abstract: Abstract In this paper, a heterojunction-based SiC double trench MOSFET (HJ-DTMOS) is proposed to improve its switching performance and the reverse recovery characteristic. In the HJ-DTMOS, a n+p− polysilicon junction is introduced in both the… read more here.
Keywords: trench; based sic; heterojunction based; reverse recovery ... See more keywords
A modified finite difference model to the reverse recovery of silicon PIN diodes
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107839
Abstract: Abstract In this paper, Silvaco Atlas TCAD device-circuit mixed simulation and MATLAB programming are used to compute the reverse recovery processes of silicon PIN diodes. The latter is based on solving the ambipolar diffusion equation… read more here.
Keywords: silicon pin; reverse recovery; simulation; pin diodes ... See more keywords
Integrated 100 V bootstrap diode with enhanced reverse recovery characteristics for eGaN‐field effect transistor gate drivers
Sign Up to like & getrecommendations! Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2019.3638
Abstract: An integrated 100 V bootstrap diode (DBST) with anode engineering based on the double epitaxial process for enhancement mode gallium nitride (eGaN) transistor gate drivers is first proposed in this Letter. On the anode side,… read more here.
Keywords: recovery; bootstrap diode; reverse recovery; 100 bootstrap ... See more keywords
Reverse recovery characteristics of high power thyristors in HVDC converter valve
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Dielectrics and Electrical Insulation"
DOI: 10.1109/tdei.2017.006258
Abstract: The reverse recovery characteristics of high power thyristor are important device physical properties influencing the reliable operation of HVDC thyristor valve. In this paper, the reverse recovery characteristics of high power thyristor are investigated from… read more here.
Keywords: recovery; thyristor; high power; reverse recovery ... See more keywords
A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2936584
Abstract: A superjunction MOSFET with an integrated tunneling diode is proposed and investigated by simulations in this article. The tunneling diode comprised the N+ region and the P+ region on the surface of the P-base region… read more here.
Keywords: recovery charge; tunneling diode; reverse recovery; region ... See more keywords
A Voltage Model of p-i-n Diodes at Reverse Recovery Under Short-Time Freewheeling
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2535664
Abstract: Fast switching and large capacity in modern power converters generate large-voltage peak during the diode's reverse-recovery process. Being different from the steady-state reverse recovery, short-time freewheeling of diodes at higher speed switching may generate higher… read more here.
Keywords: model; short time; reverse recovery; time freewheeling ... See more keywords
Diode Reverse Recovery Process and Reduction of a Half-Wave Series Cockcroft–Walton Voltage Multiplier for High-Frequency High-Voltage Generator Applications
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2018.2834406
Abstract: This paper investigates the diode reverse recovery process and reduction of a half-wave (HW) series Cockcroft–Walton (CW) voltage multiplier based on the steady-state analysis for high-frequency high-voltage (HV) generator applications. The diode reverse recovery process… read more here.
Keywords: voltage; frequency; voltage multiplier; diode reverse ... See more keywords
Pulsed Power Modulator With Active Pull-Down Using Diode Reverse Recovery Time
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2019.2924586
Abstract: This paper presents a pulsed power modulator with a new structure that utilizes the reverse recovery characteristics of diodes to achieve an effective pull-down circuit configuration. The proposed configuration for active pull-down applicable to negative… read more here.
Keywords: modulator; pulsed power; power; pull ... See more keywords
Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2023.3268673
Abstract: This letter reveals the effect of the reverse-recovery current of a PIN diode on the surge and gate-noise voltages of an insulated-gate bipolar transistor (IGBT) in an inverter. Theoretical analysis reveals that the $di/dt$ of… read more here.
Keywords: surge; analysis; recovery current; gate noise ... See more keywords
4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14050950
Abstract: In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used… read more here.
Keywords: trench mos; reverse recovery; channel diode; mos channel ... See more keywords