Review of Ga2O3-based optoelectronic devices
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DOI: 10.1016/j.mtphys.2019.100157
Abstract: Abstract Gallium oxide (Ga2O3), with an ultrawide-bandgap of ~4.9 eV, has attracted recently much scientific and technological attention due to its extensive future applications in power electronics (field effect transistors, Schottky barrier diodes), optoelectronics (phosphors and… read more here.
Keywords: optoelectronic devices; review ga2o3; based optoelectronic; ga2o3 based ... See more keywords