Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2938262
Abstract: An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of… read more here.
Keywords: threshold voltage; voltage; sic mosfets; mosfets high ... See more keywords
A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3005940
Abstract: Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by… read more here.
Keywords: sic igbt; igbt; models fabrications; review sic ... See more keywords