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Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac3710
Abstract: In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to…
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Keywords:
iii nitride;
electrical analysis;
rich algan;
light emitters ... See more keywords
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Published in 2020 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.5129803
Abstract: Research results for AlGaN-channel transistors are reviewed as they have progressed from low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of merit (FOM) analysis shows encouraging comparisons relative to today’s state-of-the-art…
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Keywords:
algan based;
channel devices;
rich algan;
transistors rich ... See more keywords