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Published in 2020 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.5129803
Abstract: Research results for AlGaN-channel transistors are reviewed as they have progressed from low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of merit (FOM) analysis shows encouraging comparisons relative to today’s state-of-the-art…
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Keywords:
algan based;
channel devices;
rich algan;
transistors rich ... See more keywords