Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
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DOI: 10.1109/access.2018.2861323
Abstract: Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of ohmic… read more here.
Keywords: temperature; ohmic contacts; rise; rise channel ... See more keywords