N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature Over 448 K
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DOI: 10.1109/ted.2020.2990387
Abstract: In this article, we investigated the destructive behavior of the latest power diode when operating a hard-switching process. From the numerical simulation analysis, the destruction behavior originates in the enhanced impact ionization at the p-n… read more here.
Keywords: robustness high; power diode; power; dynamic robustness ... See more keywords