Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
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DOI: 10.1016/j.microrel.2020.113872
Abstract: Abstract Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption… read more here.
Keywords: role algan; algan barrier; gate; gan gate ... See more keywords