Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
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DOI: 10.1016/j.mee.2017.11.002
Abstract: Abstract Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6 nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related… read more here.
Keywords: highly doped; role highly; substrate bipolar; resistive switching ... See more keywords