The important role of Ga vacancies in the ferromagnetic GaN thin films
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DOI: 10.1016/j.jallcom.2016.12.405
Abstract: Abstract Room-temperature ferromagnetism was observed in the unintentionally doped GaN films, which were fabricated using laser molecular beam epitaxy followed by annealing process at different temperatures from 800 to 1000 °C for 25 min in flowing nitrogen… read more here.
Keywords: role vacancies; temperature; important role; doped gan ... See more keywords