Roles of Oxygen Vacancy in Improper Ferroelectrics
Sign Up to like & getrecommendations! Published in 2018 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927618000867
Abstract: 1. National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua Univ., Beijing, P. R. China. 2. Dept. of Condens. Matter Phys. and Mater. Sci., Brookhaven National Lab., Upton, NY. 3.… read more here.
Keywords: beijing china; oxygen vacancy; roles oxygen; microscopy ... See more keywords
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with SubĪ¼m Channel Lengths.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c07258
Abstract: Roles of oxygen interstitial defects located in the In-Ga-Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry… read more here.
Keywords: gate stack; oxygen interstitial; thin films; interstitial defects ... See more keywords