Toward reliable RRAM performance: macro- and micro-analysis of operation processes
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-1105-5
Abstract: Resistive random access memory (RRAM) technology promises superior performance and scalability while employing well-developed fabrication processes. Conductance in insulating oxides employed in RRAM devices can be strongly affected by atomic-level changes that makes cell switching… read more here.
Keywords: reliable rram; rram performance; toward reliable; operation ... See more keywords
Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-07987-1
Abstract: Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly… read more here.
Keywords: sweep operation; current sweep; multilevel cell; operation nonlinear ... See more keywords
Parasitic engineering for RRAM control.
Sign Up to like & getrecommendations! Published in 2018 at "Solid-state electronics"
DOI: 10.1016/j.sse.2018.10.006
Abstract: The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing… read more here.
Keywords: parasitic engineering; control; rram control; rram ... See more keywords
Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc02579h
Abstract: The fiber-shaped resistive random access memory (RRAM) is an important subject for flexible wearable electronic textiles. The investigation of the resistive switching (RS) performance of the materials in the basic storage unit (crosspoint) of a… read more here.
Keywords: rram devices; switching performance; rram; fcpe rram ... See more keywords
Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d1ra08103a
Abstract: Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO2/Al2O3/HfO2) at low temperature over an Indium Tin Oxide (ITO) transparent electrode. First, the microstructure of the fabricated TaN/HfO2/Al2O3/HfO2/ITO RRAM device was examined by the… read more here.
Keywords: resistive switching; hfo2 al2o3; rram; hfo2 ... See more keywords
Review of electrical stimulus methods of in situ transmission electron microscope to study resistive random access memory.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr01872a
Abstract: Resistive random access memory (RRAM) devices have been demonstrated to be a promising solution for the implementation of a neuromorphic system with high-density synapses due to the simple device structure, nanoscale dimension, high switching speed,… read more here.
Keywords: rram devices; situ transmission; random access; access memory ... See more keywords
An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices
Sign Up to like & getrecommendations! Published in 2023 at "RSC Advances"
DOI: 10.1039/d3ra00078h
Abstract: Hybrid lead halide perovskites have been considered as promising candidates for a large variety of optoelectronic applications. By exploring novel combinations of lead-free double perovskite halides, it is possible to find a suitable replacement for… read more here.
Keywords: electronic optical; perovskite halides; rram; optically influenced ... See more keywords
Hardware implementation of RRAM based binarized neural networks
Sign Up to like & getrecommendations! Published in 2019 at "APL Materials"
DOI: 10.1063/1.5116863
Abstract: Resistive switching random access memory (RRAM) has been explored to accelerate the computation of neural networks. RRAM with linear conductance modulation is usually required for the efficient weight updating during the online training according to… read more here.
Keywords: online training; neural networks; binarized neural; weight updating ... See more keywords
Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0145201
Abstract: As the demand for computing applications capable of processing large datasets increases, there is a growing need for new in-memory computing technologies. Oxide-based resistive random-access memory (RRAM) devices are promising candidates for such applications because… read more here.
Keywords: temperature; rram; rram devices; resistance change ... See more keywords
Neuromorphic In-Memory RRAM NAND/NOR Circuit Performance Analysis in a CNN Training Framework on the Edge for Low Power IoT
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3219066
Abstract: Training a CNN involves computationally intense optimization algorithms to fit the network using a training dataset, to update the network weight for inferencing and then pattern classification. Hence, the application of in-memory computation would enable… read more here.
Keywords: memory; rram; cnn training; rram nand ... See more keywords
Stuck-at Fault Tolerance in RRAM Computing Systems
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal on Emerging and Selected Topics in Circuits and Systems"
DOI: 10.1109/jetcas.2017.2776980
Abstract: Emerging metal-oxide resistive switching random-access memory (RRAM) devices and RRAM crossbars have demonstrated their potential in boosting the speed and energy-efficiency of analog matrix-vector multiplication. However, due to the immature fabrication technology, commonly occurring Stuck-At-Faults… read more here.
Keywords: fault tolerance; redundancy; rram; distribution ... See more keywords