Compositional effects of hybrid MoS2–GO active layer on the performance of unipolar, low-power and multistate RRAM device
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DOI: 10.1088/1361-6528/ad5db6
Abstract: Currently, 2D nanomaterials-based resistive random access memory (RRAMs) are explored on account of their tunable material properties enabling fabrication of low power and flexible RRAM devices. In this work, hybrid MoS2–GO based active layer RRAM… read more here.
Keywords: rram device; active layer; rram devices; rram ... See more keywords