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   Articles with "rram devices" as a keyword



Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices

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recommendations! Published in 2017 at "Microelectronic Engineering"

DOI: 10.1016/j.mee.2017.05.024

Abstract: In this work, Ni/HfO2/Al2O3/n+-Si and Ni/Al2O3/HfO2/n+-Si RRAM devices have been investigated with the purpose to determine the role of the HfO2/Al2O3 stacking order in the electrical properties and the resistive switching phenomena in unipolar RRAM… read more here.

Keywords: hfo2 al2o3; order; rram devices; stacking order ... See more keywords

Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite

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recommendations! Published in 2020 at "Journal of Materials Chemistry C"

DOI: 10.1039/d0tc02579h

Abstract: The fiber-shaped resistive random access memory (RRAM) is an important subject for flexible wearable electronic textiles. The investigation of the resistive switching (RS) performance of the materials in the basic storage unit (crosspoint) of a… read more here.

Keywords: rram devices; switching performance; rram; fcpe rram ... See more keywords

Review of electrical stimulus methods of in situ transmission electron microscope to study resistive random access memory.

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recommendations! Published in 2022 at "Nanoscale"

DOI: 10.1039/d2nr01872a

Abstract: Resistive random access memory (RRAM) devices have been demonstrated to be a promising solution for the implementation of a neuromorphic system with high-density synapses due to the simple device structure, nanoscale dimension, high switching speed,… read more here.

Keywords: rram devices; situ transmission; random access; access memory ... See more keywords

Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films

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recommendations! Published in 2020 at "AIP Advances"

DOI: 10.1063/1.5134972

Abstract: BiFeO3 based resistive random access memory (RRAM) devices are fabricated using a low-cost solution process to study the effect of an Al top electrode on switching behavior and reliability. Fabricated devices demonstrated bipolar switching characteristics… read more here.

Keywords: rram devices; layer; solution; bifeo3 ... See more keywords

Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study

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recommendations! Published in 2023 at "Journal of Applied Physics"

DOI: 10.1063/5.0145201

Abstract: As the demand for computing applications capable of processing large datasets increases, there is a growing need for new in-memory computing technologies. Oxide-based resistive random-access memory (RRAM) devices are promising candidates for such applications because… read more here.

Keywords: temperature; rram; rram devices; resistance change ... See more keywords

Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices

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recommendations! Published in 2022 at "Nanotechnology"

DOI: 10.1088/1361-6528/aca418

Abstract: In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V… read more here.

Keywords: resistive switching; ga2o3; rram devices; low power ... See more keywords

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices

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recommendations! Published in 2023 at "Nanotechnology"

DOI: 10.1088/1361-6528/acc078

Abstract: Y-doping can effectively improve the performance of HfO x -based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfO x -based memristors is still missing and unclear.… read more here.

Keywords: rram devices; spectroscopy; hfo based; impedance ... See more keywords
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Compositional effects of hybrid MoS2–GO active layer on the performance of unipolar, low-power and multistate RRAM device

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recommendations! Published in 2024 at "Nanotechnology"

DOI: 10.1088/1361-6528/ad5db6

Abstract: Currently, 2D nanomaterials-based resistive random access memory (RRAMs) are explored on account of their tunable material properties enabling fabrication of low power and flexible RRAM devices. In this work, hybrid MoS2–GO based active layer RRAM… read more here.

Keywords: rram device; active layer; rram devices; rram ... See more keywords

Solution processed Ti3C2 MXene nanosheets as resistive switching layers in flexible RRAM devices for sustainable electronics

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recommendations! Published in 2025 at "Nanotechnology"

DOI: 10.1088/1361-6528/ae029c

Abstract: Due to their exceptional chemical stability and tunable chemical properties particularly the interlayer bonding, MXenes have emerged as promising switching layers in RRAM devices. This work presents the synthesis of nanosheets of a widely explored… read more here.

Keywords: rram devices; solution; ion ioff; flexible rram ... See more keywords
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Biodegradable and flexible ι-carrageenan based RRAM with ultralow power consumption

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recommendations! Published in 2024 at "Chinese Physics B"

DOI: 10.1088/1674-1056/ad19d4

Abstract: Transient memories, which can physically disappear without leaving traceable remains over a period of normal operation, are attracting increasing attention for potential applications in the fields of data security and green electronics. Resistive random access… read more here.

Keywords: rram devices; rram; ultralow power; car ... See more keywords

Volatility Characterization for RRAM Devices

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recommendations! Published in 2017 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2016.2631631

Abstract: Emerging technologies, such as resistive random access memory (RRAM), are being actively researched for its potential applications in developing new technologies inspired by brainlike neuromorphic computing. However, developing automated characterization algorithms for the metastable resistive… read more here.

Keywords: characterization rram; rram devices; volatility characterization; rram ... See more keywords