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Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6576-z
Abstract: We report on the selective area epitaxy (SAE) of AlGaN/GaN microstructures in stretchable geometric patterns. We have investigated dependence of Al incorporation, lateral/sidewall growth profile and electrical properties of SAE heterostructures on Al/Ga source ratio…
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Keywords:
algan gan;
selective area;
geometry;
sae algan ... See more keywords