Articles with "sapphire" as a keyword



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High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

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Published in 2018 at "Advanced materials"

DOI: 10.1002/adma.201801608

Abstract: Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire… read more here.

Keywords: sapphire; emitting diodes; light emitting; high brightness ... See more keywords
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Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene.

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Published in 2019 at "Small"

DOI: 10.1002/smll.201904906

Abstract: The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To… read more here.

Keywords: synthesis; microscopy; wafer scale; graphene ... See more keywords
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Atomic-Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD.

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Published in 2022 at "Small"

DOI: 10.1002/smll.202200057

Abstract: The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity… read more here.

Keywords: spontaneous polarity; sapphire; mechanism; polarity inversion ... See more keywords
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Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate

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Published in 2019 at "Microsystem Technologies"

DOI: 10.1007/s00542-018-3903-5

Abstract: This paper aims to characterize two high electron mobility transistors analyzed with sapphire and 4H-SiC substrate. Comparison of the two structures are carried out in terms of threshold voltage (Vt), maximum drain current (ID), transconductance… read more here.

Keywords: sic substrate; sapphire; sapphire sic; high electron ... See more keywords
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A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering

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Published in 2017 at "Journal of Materials Science: Materials in Electronics"

DOI: 10.1007/s10854-017-6657-4

Abstract: In this work, we investigate the growth of indium nitride (InN) films on quartz, bulk GaN, sapphire (001) and Si (111) substrates. An InN buffer layer was first deposited on all the substrates, then an… read more here.

Keywords: inn buffered; sapphire; comparative study; growth ... See more keywords
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Machinability study of single-crystal sapphire in a ball-end milling process

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Published in 2017 at "International Journal of Precision Engineering and Manufacturing"

DOI: 10.1007/s12541-017-0013-8

Abstract: Sapphire has received increasing attention as an engineering material even though its machinability is still an issue. In this study, the influence of the milling process parameters on the surface quality of single-crystal sapphire is… read more here.

Keywords: sapphire; single crystal; crystal sapphire; tool ... See more keywords
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Lattice-alignment mechanism of SiGe on Sapphire

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Published in 2018 at "Acta Materialia"

DOI: 10.1016/j.actamat.2017.11.031

Abstract: Abstract Heteroepitaxy of silicon germanium (SiGe) prepared on a sapphire substrate (Al 2 O 3 ) requires scrupulous attention to growth conditions. Previous work was used a substrate temperature of 890 ° C to grow… read more here.

Keywords: mechanism; sapphire; sige; growth ... See more keywords
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Large area uniform PtSx synthesis on sapphire substrate for performance improved photodetectors

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Published in 2021 at "Applied Materials Today"

DOI: 10.1016/j.apmt.2021.101176

Abstract: Abstract PtSx, as a more recent 2D material that aroused extensive research interests, has been applied in electronic and optoelectronic devices because of its excellent electronic characteristics and commendable stability. However, the synthesis of large-scale… read more here.

Keywords: ptsx; sapphire; uniform ptsx; area uniform ... See more keywords
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

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Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.144086

Abstract: Abstract InAlN as a functional inorganic material is a promising alternative to the commonly used InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy bandgap (0.65–6.2 eV), thus empowering utilization… read more here.

Keywords: inaln; sapphire; rich inaln; layer ... See more keywords
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Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire

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Published in 2021 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2021.150798

Abstract: Abstract Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as a good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over the wafer scale… read more here.

Keywords: monolayer wse2; orientation; wafer scale; sapphire ... See more keywords
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Microstructural evolution, mechanical properties, and FEM analysis of the residual stress of sapphire joints brazed with a novel borate glass

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Published in 2020 at "Ceramics International"

DOI: 10.1016/j.ceramint.2020.11.010

Abstract: Abstract Borate glass (80B2O3-20Bi2O3 in mol.%), which had a coefficient of thermal expansion (CTE) that was exceptionally compatible with that of sapphire, was designed and used as a braze to join sapphire. Prior to joining,… read more here.

Keywords: sapphire; microstructural evolution; glass; borate glass ... See more keywords