Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate
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DOI: 10.1007/s00542-018-3903-5
Abstract: This paper aims to characterize two high electron mobility transistors analyzed with sapphire and 4H-SiC substrate. Comparison of the two structures are carried out in terms of threshold voltage (Vt), maximum drain current (ID), transconductance… read more here.
Keywords: sic substrate; sapphire; sapphire sic; high electron ... See more keywords