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Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.06.012
Abstract: Abstract A stripe-shaped cavity structure was formed with amorphous alumina membrane on a sapphire substrate and its solid phase epitaxy (SPE) to crystalline sapphire membrane was investigated by transmission electron microscopy (TEM). The SPE process…
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Keywords:
phase;
sapphire substrate;
solid phase;
amorphous alumina ... See more keywords
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Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.11.020
Abstract: Abstract The effects of the vanadium (V) doping on the initial growth of ZnO films on a c-face sapphire substrate were investigated. The V-doped ZnO (VZO) films were grown at 200 °C by RF magnetron sputtering…
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Keywords:
doping initial;
initial growth;
sapphire substrate;
zno ... See more keywords
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Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.03.015
Abstract: Abstract In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode…
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Keywords:
sapphire substrate;
patterned sapphire;
plane sapphire;
sapphire ... See more keywords
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Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c04888
Abstract: β-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of…
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Keywords:
mist cvd;
growth;
film;
sapphire substrate ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep45519
Abstract: We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping…
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Keywords:
grown patterned;
sapphire substrate;
patterned sapphire;
raman ... See more keywords
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Published in 2019 at "CrystEngComm"
DOI: 10.1039/c9ce00995g
Abstract: In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.
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Keywords:
plane;
plane gan;
quality;
sapphire substrate ... See more keywords
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Published in 2022 at "Nanoscale"
DOI: 10.1039/d1nr08221c
Abstract: Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state lighting and high-resolution displays. As one of the widely used substrates, sapphire shows superiority for heteroepitaxial growth of III-nitride light-emitting diode (LED) structure, due…
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Keywords:
iii nitride;
patterned sapphire;
nitride light;
light emitting ... See more keywords
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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5008258
Abstract: We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo–convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick…
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Keywords:
quality;
sapphire substrate;
surface;
quality aln ... See more keywords
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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5039755
Abstract: This study investigated the formation of nitrogen-filled voids at the interface between a GaN layer grown on a sapphire substrate by metalorganic vapor phase epitaxy. These voids were formed in the sapphire substrate at the…
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Keywords:
sapphire substrate;
filled voids;
nitrogen filled;
sapphire ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0024070
Abstract: One-inch free-standing (001) diamond layers on a (11 2 ¯0) (a-plane) sapphire substrate with an Ir buffer layer (Kenzan Diamond®) were grown. The full-width at half maximum values of (004) and (311) x-ray rocking curves…
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Keywords:
sapphire substrate;
sapphire;
one inch;
001 diamond ... See more keywords
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Published in 2017 at "Acta Physica Polonica A"
DOI: 10.12693/aphyspola.131.1325
Abstract: ZnO has attracted much attention due to its wide bandgap (3.2 eV) and high exciton binding energy of 60 meV. These properties make ZnO a highly desirable material for high frequency devices that can work…
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Keywords:
sapphire substrate;
thin films;
sapphire;
pre growth ... See more keywords