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Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.06.012
Abstract: Abstract A stripe-shaped cavity structure was formed with amorphous alumina membrane on a sapphire substrate and its solid phase epitaxy (SPE) to crystalline sapphire membrane was investigated by transmission electron microscopy (TEM). The SPE process… read more here.
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Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.11.020
Abstract: Abstract The effects of the vanadium (V) doping on the initial growth of ZnO films on a c-face sapphire substrate were investigated. The V-doped ZnO (VZO) films were grown at 200 °C by RF magnetron sputtering… read more here.
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Published in 2017 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2017.03.015
Abstract: Abstract In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode… read more here.
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Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c04888
Abstract: β-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of… read more here.
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep45519
Abstract: We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping… read more here.
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Published in 2022 at "Nanoscale"
DOI: 10.1039/d1nr08221c
Abstract: Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state lighting and high-resolution displays. As one of the widely used substrates, sapphire shows superiority for heteroepitaxial growth of III-nitride light-emitting diode (LED) structure, due… read more here.
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Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5008258
Abstract: We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo–convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick… read more here.
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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5039755
Abstract: This study investigated the formation of nitrogen-filled voids at the interface between a GaN layer grown on a sapphire substrate by metalorganic vapor phase epitaxy. These voids were formed in the sapphire substrate at the… read more here.
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0024070
Abstract: One-inch free-standing (001) diamond layers on a (11 2 ¯0) (a-plane) sapphire substrate with an Ir buffer layer (Kenzan Diamond®) were grown. The full-width at half maximum values of (004) and (311) x-ray rocking curves… read more here.
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Published in 2025 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/adca55
Abstract: A polishing pad plays a crucial role in chemical mechanical polishing (CMP) of semiconductor fabrication. Among the CMP pads, polyurethane (PU) pads have been widely applied in global planarization of sapphire substrate surface due to… read more here.